Due to the coupling of piezoelectric and semiconductor properties, the wurtzite structure semiconductors have been used for fabricating high performance piezotronic devices. The carrier transport behavior can be effectively controlled by the polarized charges induced by applied strain. High-sensitive piezotronic strain sensors have potential application in next generation self-powered, flexible electronics and wearable systems. In this study, a piezotronic bipolar transistor has been studied through theoretical calculation and numerical simulation. The output current, gauge factor and carrier concentration have been simulated under the influence of different strains. The piezotronic bipolar transistor based strain sensor has ultrahigh sensitivity and the gauge factor can reach over 104. This investigation not only provides a theoretical insight into the piezotronic effect on bipolar transistor, but also presents a new approach to design ultra-high sensitivity strain sensor.

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