Dual-color electroluminescence (lambda approximate to 450 nm and 650-700 nm) from a silicon-based light source

作者：Tan W K^*; Chen Q; Ye J D; Yu M B; Lo Guo Qiang; Kwong D L

来源：IEEE Electron Device Letters, 2008, 29(4): 344-346.

DOI：10.1109/LED.2008.917932

• dual-color emission
• electroluminescence (EL)
• light emitting
• thin alpha-Si/SiO2 multilayer stack
• photoluminescence (PL)

In this letter, bright "purple" electrolumineseence is observed from a multilayer stack with thin amorphous silicon (alpha-Si)/SiO2, due to the dual-color light emissions in blue and red. Under photoexcitation, the blue emission is negligible compared with the long wavelength red emission and is only present weakly after anneal in N-2 exceeding 900 degrees C. However, under electrical excitation, the blue becomes obviously visible and show. faster increasing rate with increased carrier injection than the red. From analysis of the samples with different a-Si thicknesses (2-7 nm), the red emission is deemed to have resulted from the quantum-confinement effect within the thin alpha-Si layers, whereas the blue emission is speculated to have originated from the Si/SiO2 interfacial defects.

• 出版日期2008-4