Memory Devices: In Situ Tuning of Switching Window in a Gate-Controlled Bilayer Graphene-Electrode Resistive Memory Device (Adv. Mater. 47/2015)

作者:He, Tian; Haiming, Zhao; Xue-Feng, Wang; Qian-Yi, Xie; Hong-Yu, Chen; Mohammad Ali, Mohammad; Cheng, Li; Wen-Tian, Mi; Zhi, Bie; Chao-Hui, Yeh; Yi, Yang; H.-S. Philip, Wong; Po-Wen, Chiu; Tian-Ling, Ren
来源:Advanced Materials, 2015, 27(47): 7766-7766.
DOI:10.1002/adma.201570323
  • 出版日期2015-12
  • 单位清华大学; Stanford University.; STANFORD UNIVERSITY