Analysis of temperature dependent electrical properties of Au/perylene-diimide/n-Si Schottky diodes

作者：Yuksel O F; Tugluoglu N^*; Safak H; Nalcacigil Z; Kus M; Karadeniz S

来源：Thin Solid Films, 2013, 534: 614-620.

DOI：10.1016/j.tsf.2013.02.042

• Metal-organic-inorganic semiconductor structure
• Current-voltage characteristics
• Capacitance-voltage characteristics
• Perylene-diimide
• Interface states
• Barrier height

The electrical properties of Au/perylene-diimide/n-Si Schottky diode have been determined by means of current-voltage measurements in the temperature range of 75-300 K. These devices showed good rectifying behavior and the temperature dependence of the current-voltage characteristics could be explained by thermionic emission mechanism. The experimental values of barrier height and ideality factor for device have been calculated as 0.168 eV and 7.63 eV at 75 K and 0.690 eV and 1.57 eV at 300 K, respectively. The fabricated Schottky diode shows non-ideal current-voltage behavior and so it is thought that the device have a metal-interface layer-semiconductor configuration. In addition to current-voltage measurements, the room temperature capacitance-voltage characteristics of Au/perylene-diimide/n-Si devices were also investigated. The barrier height value of 1.051 eV obtained from the capacitance-voltage measurements was found to be higher than that of 0.690 eV obtained from the current-voltage measurements at room temperature. Furthermore, the energy distribution of the interface state density determined from current-voltage characteristics increases exponentially with bias from 8.01 x 10(12) eV(-1) cm(-2) at ( E-c - 0.666) eV to 5.86 x 10(13) eV(-1) cm(-2) at (E-c - 0.575) eV.

• 出版日期2013-5-1