A 1.2 V, 3.0 ppm/degrees C, 3.6 mu A CMOS bandgap reference with novel 3-order curvature compensation

作者：Liu, Lianxi^*; Huang, Wenbin; Mu, Junchao; Zhu, Zhangming; Yang, Yintang

来源：MICROELECTRONICS JOURNAL, 2018, 72: 49-57.

DOI：10.1016/j.mejo.2017.12.006

• Bandgap reference
• High-order curvature compensation
• Temperature coefficient
• Low-power
• Line regulation

This paper presents a bandgap reference with a high-order curvature compensation circuit which can improve the temperature coefficient (TC) in a wide temperature range. The proposed compensation circuit includes a second-order and a third-order curvature current generators as well as an I-V converter. These two curvature currents are achieved by utilizing the exponential behavior of sub-threshold MOSFET and used for compensating the high-order temperature dependence of BJT base-emitter voltage via I-V converter. The proposed BGR is implemented in a CMOS 0.18 mu m process with the active area of 0.056 mm(2). Measurements on ten samples showed that at the minimum supply voltage 1.2 V, the TC varies from 1.7 to 6.9 ppm/degrees C over a temperature range of 170 degrees C (-45 degrees C-125 degrees C) with an average value of 3.0 ppm/degrees C and the total current consumption of 3.6 mu A at room temperature. In the supply voltage range of 1.2-1.8 V, the line regulation (LR) is 0.025%/V.

• 出版日期2018-2
• 单位西安电子科技大学