Analysis of the On-state Resistance of Photoconductive Semiconductor Switches in the Non-linear Mode

作者：Wang Baojie^*; Liu Kefu; Qiu Jian

来源：IEEE Transactions on Dielectrics and Electrical Insulation, 2013, 20(4): 1287-1292.

DOI：10.1109/tdei.2013.6571446

• Photo conducting devices
• photoconductivity
• power semiconductor switches
• PCSS
• conductivity

Excellent performances such as ultrafast rise-time, low jitter, good synchronization and high electric-field strength make photoconductive semiconductor switches (PCSSs) have a wider prospect of application. Among other parameters, it is very important to evaluate the on-state resistance of the PCSS. In this paper, the influence of bias voltage, on-state current and trigger position on the on-state resistance of GaAs PCSS is described. We extracted the relationship between the elements mentioned above and the on-state resistance from our experimental data. The on-state resistance decreases with increasing bias voltage as well as increasing on-state current. The best trigger position was evaluated to be on the cathode. The on-state resistance increases as the trigger position shifts from cathode to anode gradually. The experimental results are further discussed in this paper.

• 出版日期2013-8
• 单位复旦大学