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摘要
We find that the Hall effect resistivity (rho(xy)) of thin films of La0.8Sr0.2MnO3 varies as a function of the angle 0 between the applied magnetic field and the film normal as rho(xy) = a cos 0 + b cos 30, where vertical bar b vertical bar increases with increasing temperature and decreases with increasing magnetic field. We find that the angular dependence of the longitudinal resistivity and the magnetization cannot fully explain the surprising term b, suggesting it is a manifestation of an intrinsic transport property.
- 出版日期2012-11-5
