DSH-MRAM: Differential Spin Hall MRAM for On-Chip Memories

作者：Kim Yusung^*; Choday Sri Harsha; Roy Kaushik

来源：IEEE Electron Device Letters, 2013, 34(10): 1259-1261.

DOI：10.1109/LED.2013.2279153

• Differential magnetic random access memory (MRAM)
• spin Hall effect (SHE)
• spin torque
• spin-transfer torque MRAM (STT-MRAM)
• spintronics

A new device structure for spin-transfer torque-based magnetic random access memory (STT-MRAM) is proposed for on-chip memory applications. Our device structure exploits spin Hall effect to create a differential memory cell that exhibits fast and energy-efficient write operation. In addition, because of inherently differential device structure, fast and reliable read operation can be performed. Our simulation study shows 10x improvement in write energy over the standard 1T1R in-plane STT-MRAM memory cell, and 1.6x faster read operation compared with single-ended sensing (as in standard 1T1R STT-MRAMs). The bit-cell characteristics are promising for high performance on-chip memory applications.

• 出版日期2013-10