科研之友
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摘要
This paper proposes an investigation of 1200 V rated transistors with the twofold purpose of assessing their performance and robustness under representative operational conditions and of extracting guidelines for the design of reliable multi-chip power electronics modules based on SiC technology. It includes a thorough analysis of the devices steady-state and switching characteristics, as well as the investigation of short-circuit events. Taking into account operational conditions of real applications, this study considers the dependence on ambient temperature, bias conditions and driver circuit parameters.
- 出版日期2011-11
