Method of estimating mechanical stress on Si body of MOSFET using drain-body junction current

作者：Seo Ji Hoon; Kim Gang Jun; Son Donghee; Lee Nam Hyun; Kang Bongkoo^*

来源：Japanese Journal of Applied Physics, 2017, 56(1): 011302.

DOI：10.7567/JJAP.56.011302

A simple and accurate method of estimating the mechanical stress sigma on the Si body of a MOSFET is proposed. This method measures the doping concentration of the body, N-d, and the onset voltage V-hl for the high-level injection of the drain-body junction, uses N-d, the ideality factor eta, and the Fermi potential phi(r) approximate to V-hl/2 eta to calculate the intrinsic carrier concentration eta(i) of the Si body, and then uses the calculated eta(i) to obtain the bandgap energy E-g of the Si body. sigma is estimated from E-g using the deformation potential theory. The estimates of sigma agree well with those obtained using previous methods. The proposed method requires one MOSFET, whereas the others require at least two MOSFETs, so the proposed method can give an absolute measurement of sigma on the Si body of a MOSFET.

• 出版日期2017-1