Anti-binding of biexcitons in (211)B InAs/GaAs piezoelectric quantum dots

作者：Dialynas G E^*; Xenogianni C; Tsintzos S; Trichas E; Savvidis P G; Constantinidis G; Renard J; Gayral B; Hatzopoulos Z; Pelekanos N T

来源：Physica E: Low-Dimensional Systems and Nanostructures , 2008, 40(6): 2113-2115.

DOI：10.1016/j.physe.2007.10.036

• quantum dots
• piezoelectric effect
• exciton related effects

We report on single dot spectroscopy of polar (2 1 1)B InAs/GaAs quantum dots grown by molecular beam epitaxy. Exciton and biexciton peaks have been identified, revealing a negative biexciton binding energy attributed to the presence of strong piezoelectric field.

• 单位
  中国地震局