摘要
The large-area few-layer MoS2 film were synthesized via a thermally decomposition method. The MoS2/Si nanowires array (SiNWA) heterojunctions were constructed and investigated, which exhibited highly humidity-dependent electrical properties in both forward and reverse voltages. Further analysis reveals that such MoS2/SiNWA heterojunction devices are highly sensitive to varying relative humidity (RH) values ranging from 11% to 95% with excellent stability, reproducibility and fast response speeds. The sensitivities and response/recovery speeds were obtained to be 392% and 26.4/15.1 s at 95% RH under voltage bias of +5 V, and 2967% and 22.2/11.5 s at 95% RH under voltage bias of -5 V, respectively. Such high-performances of dual-mode MoS2/SiNWA heterojunction humidity sensor are superior to the previous reported results, revealing that they will have great potential applications in highly sensitive humidity sensors.
- 出版日期2017-12-5
- 单位郑州大学