Analysis on the off-state design and characterization of LIGBTs in partial SOI technology

作者：Tee Elizabeth Kho Ching^*; Antoniou Marina; Udrea Florin; Hoelke Alexander; Ng Liang Yew; Abidin Wan Azlan Bin Wan Zainal; Pilkington Steven John; Pal Deb Kumar

来源：Solid-State Electronics, 2014, 96: 38-43.

DOI：10.1016/j.sse.2014.04.018

• Breakdown
• LIGBT
• Superjunction
• Partial SOI

Classical high voltage devices fabricated on SOI substrates suffer from a backside coupling effect which could result in premature breakdown. This phenomenon becomes more prominent if the structure is an IGBT which features a p-type injector. To suppress the premature breakdown due to crowding of electro-potential lines within a confined SOI/buried oxide structure, the partial SO1 (PS01) technique is being introduced. This paper analyzes the off-state behavior of an n-type Superjunction (SJ) LIGBT fabricated on PSOI substrate. During the initial development stage the SJ LIGBT was found to have very high leakage. This was attributed to the back and side coupling effects. This paper discusses these effects and shows how this problem could be successfully addressed with minimal modifications of device layout. The off-state performance of the SJ LIGBT at different temperatures is assessed and a comparison to an equivalent LDMOSFET is given.

• 出版日期2014-6