Embedding electron-deficient nitrogen atoms in polymer backbone towards high performance n-type polymer field-effect transistors

作者：Dai, Ya-Zhong; Ai, Na; Lu, Yang; Zheng, Yu-Qing; Dou, Jin-Hu; Shi, Ke; Lei, Ting; Wang, Jie-Yu; Pei, Jian^*

来源：Chemical Science, 2016, 7(9): 5753-5757.

DOI：10.1039/c6sc01380e

• THIN-FILM TRANSISTORS
• DONOR-ACCEPTOR POLYMERS
• CONJUGATED POLYMERS
• HIGH-MOBILITY
• ORGANIC SEMICONDUCTORS
• CHARGE-TRANSPORT
• SIDE-CHAINS
• SOLAR-CELLS
• COPOLYMERS
• DESIGN

With sp(2)-nitrogen atoms embedded in an isatin unit, a donor-acceptor (D-A) conjugated polymer AzaBDOPV-2T was developed with a low LUMO level down to -4.37 eV. The lowered LUMO level as well as the conformation-locked planar backbone provide AzaBDOPV-2T with electron mobilities over 3.22 cm(2) V(-1)s(-1) tested under ambient conditions, which is among the highest in n-type polymer field-effect transistors (FETs). Our results demonstrate that embedding electron-deficient sp(2)-nitrogen in conjugated backbones is an effective approach to develop n-type polymer semiconductors with high performance.

• 出版日期2016
• 单位北京大学