摘要

A 10-bit 200-MS/s pipelined ADC was fabricated using a standard 65 nm CMOS technology. We propose a dual-path amplification technique for residue generation. We split the pipeline stage into a coarse-stage multiplying digital-to-analog converter (MDAC) and a fine-stage MDAC. The opamps for these two MDACs require different specifications. They can be designed and optimized separately. They are turned off when not in use to save power. We modify the operation of a pipeline stage to accommodate the dual-path scheme by using time-interleaving capacitor sets. Operating at 200 MS/s sampling rate, this ADC consumes 5.37 mW from a 1 V supply. It achieves a signal-to-noise-plus-distortion ratio (SNDR) better than 55 dB SNDR over the entire Nyquist band. The chip active area is 0.19 mm(2).

  • 出版日期2012-12

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