Analytical Compact Model of Ballistic Cylindrical Nanowire Metal-Oxide-Semiconductor Field-Effect Transistor

作者：Numata Tatsuhiro^*; Uno Shigeyasu; Nakazato Kazuo; Kamakura Yoshinari; Mori Nobuya

来源：Japanese Journal of Applied Physics, 2010, 49(4): 04DN05.

DOI：10.1143/JJAP.49.04DN05

We propose a compact model of drain current in the ballistic mode in a cylindrical gate-all-around metal-oxide-semiconductor field-effect transistor (MOSFET). Wave functions of electrons in a channel are represented by a linear combination of wave functions in a cylindrical infinite quantum well. With these wave functions, the energy levels of electrons in a channel are analytically derived by approximately solving the Schrodinger equation. Drain current is obtained using a coupled equation of electron energy levels and a current equation for ballistic transport. Electron energy levels are compared with numerical simulation results. The electron energy levels obtained using our compact model demonstrate excellent agreement with numerical simulation results. With our compact model, surface potential, potential shape in the confinement plane, total charge density, electron energy level, and drain current are calculated self-consistently with only two fitting parameters and one transcendental equation.

• 出版日期2010