About deep impurity centers in InAs

作者：Kamilov I K^*; Daunov M I; Bashirov R R; Mollaev A Yu; Arslanov R K; Gabibov S F; Arslanov T R

来源：Physica Status Solidi B-Basic Solid State Physics, 2009, 246(3): 586-588.

DOI：10.1002/pssb.200880534

Some characteristic parameters of charge carriers have been calculated for n-InAs with a surplus donor concentration similar to 10(16) cm(-3) and for p-InAs with a surplus donor concentration similar to 10(16) cm(-3) according to experimental data on hydrostatic pressure dependences of Hall coefficient R(H) and resistivity rho at 300 K. It has been found that the pressure coefficients of energy gaps between the conduction-band bottom and deep acceptor and resonance donor levels, located at a distance of epsilon(a) = -0.13 eV below and at a distance of epsilon(d) = 0.35 eV above the bottom of conduction band, respectively, are defined by a 'motion' of conduction band with the pressure. The energy of deep levels relative to absolute vacuum does not depend on pressure: pressure coefficients d epsilon(a)/dP approximate to d epsilon(d)/dP approximate to -95 meV/GPa.

• 出版日期2009-3