Asymptotic iteration study of a two-electron GaAs quantum dot

作者:Barakat T*; Al Rawaf A S
来源:Physica Scripta, 2011, 83(5): 055001.
DOI:10.1088/0031-8949/83/05/055001

摘要

Low-lying energy levels of two interacting electrons confined in a two-dimensional parabolic gallium arsenide (GaAs) quantum dot (QD) and subjected to an external uniform magnetic field of arbitrary strength have been calculated within the framework of the asymptotic iteration method. Comparing the present results with exact numerical values and with the results calculated by earlier workers, it is found that asymptotically, this method gives accurate results valid for the whole range of both spatial confinement length and the strength of the magnetic field. The present method yields a significant improvement over the Hartree, Hartree-Fock and exact diagonalization treatments, and its results are in agreement with those of a Monte Carlo analysis. Therefore, this approach and its results proposed here would be very helpful in discussing the size-dependent properties of low-lying energy of any QD with two or more electrons.

  • 出版日期2011-5