A Correlative Analysis Between Characteristics of FinFETs and SRAM Performance

作者：Endo Kazuhiko^*; O'uchi Shinichi; Ishikawa Yuki; Liu Yongxun; Matsukawa Takashi; Sakamoto Kunihiro; Tsukada Junichi; Yamauchi Hiromi; Masahara Meishoku

来源：IEEE Transactions on Electron Devices, 2012, 59(5): 1345-1352.

DOI：10.1109/TED.2012.2188633

• Fin-shaped field-effect transistor (FinFET)
• noise margin
• static random-access memory (SRAM)
• variability

A correlation between the characteristics of the 30-nm L-G fin-shaped field-effect transistors and the static random-access memory performance is precisely studied. By investigating an effect of the Vth variation to the static noise margin (SNM) variation of two different memory states of the storage node, it is revealed that the Vth variations of the pull-up, pull-down, and pass-gate transistors correlate with the SNM. Moreover, the contribution and the severity of each transistor variation to sigma SNM are clarified.

• 出版日期2012-5