Nano epitaxial growth of GaAs on Si (001)

作者：Hsu Chao Wei^*; Chen Yung Feng; Su Yan Kuin

来源：Applied Physics Letters, 2011, 99(13): 133115.

DOI：10.1063/1.3640226

• chemical vapour deposition
• dislocation density
• gallium compounds
• III-V semiconductors
• nanofabrication
• semiconductor growth
• silicon
• substrates

Nano epitaxial growth (NEG) is used to develop GaAs monolithic hetero-epitaxy onto Si (001). For the GaAs grown in a nanopatterned trench with an aspect ratio of 5, the dislocations originally generated at the GaAs/Si interface are mostly isolated by the SiO2 sidewall. Compared with the conventional-planar Si substrate, implementing the NEG technique is able to decrease the dislocation density from about 10(9) cm(-2) to almost zero. It is also confirmed that NEG is capable of confining the dislocations within the GaAs initial epitaxial layer (<100 nm), which meets the requirement of relatively less complicated epitaxial processes.

• 出版日期2011-9-26