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摘要
A gate-induced drain-leakage current model which can avoid the invalidation of 1-D models for fully depleted double-gate MOSFETs was developed based on tunneling theory and the analytical solution of a 2-D Poisson equation. For a given device geometry and a doping concentration, assuming that the drain region was fully depleted, the 2-D Poisson equation is solved using a separation-of-variable technique with appropriate boundary conditions. The results were compared with the data from a 2-D device simulation and showed good agreement.
- 出版日期2008-10
