Analysis of electron beam damage of exfoliated MoS2 sheets and quantitative HAADF-STEM imaging

作者:Garcia Alejandra; Raya Andres M; Mariscal Marcelo M; Esparza Rodrigo; Herrera Miriam; Molina Sergio I; Scavello Giovanni; Galindo Pedro L; Jose Yacaman Miguel; Ponce Arturo*
来源:Ultramicroscopy, 2014, 146: 33-38.
DOI:10.1016/j.ultramic.2014.05.004

摘要

In this work we examined MoS2 sheets by aberration-corrected scanning transmission electron microscopy (STEM) at three different energies: 80, 120 and 200 kV. Structural damage of the MoS2 sheets has been controlled at 80 kV according a theoretical calculation based on the inelastic scattering of the electrons involved in the interaction electron-matter. The threshold energy for the MoS2 material has been found and experimentally verified in the microscope. At energies higher than the energy threshold we show surface and edge defects produced by the electron beam irradiation. Quantitative analysis at atomic level in the images obtained at 80 kV has been performed using the experimental images and via STEM simulations using SICSTEM software to determine the exact number of MoS2 layers.

  • 出版日期2014-11