摘要

We propose a nonlinear device model and a systematic methodology to generate maximum power at any desired harmonic. The proposed power optimization technique is based on the Volterra-Wiener theory of nonlinear systems. By manipulating the device nonlinearity and optimizing the embedding network, optimum conditions for harmonic power generation are provided. Using this theory, a 920-944-GHz frequency quadrupler is designed in a 130-nm SiGe: C process. The circuit achieves the peak output power of -17.3 and -10 dBm of effective isotropic radiated power and consumes 5.7 mW of dc power. To the best of our knowledge, this circuit demonstrates the highest generated power among Si/SiGe-based sources at this frequency range.

  • 出版日期2017-2