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摘要
Diamond-like carbon films were prepared on tungsten carbide by using radio-frequency plasma etching chemical vapor deposition under various conditions: Ar plasma pretreatment with bias voltages of -800, -1000, and -1150 V, Ar gas flows of 62.5, 100, and 130 sccm, and pretreatment times of 15, 30, and 50 min. The surface roughness of the diamond-like carbon film on tungsten carbide was measured using atomic force microscopy. Film adhesion was evaluated using a scratch tester, after which the scratched diamond-like carbon films were inspected by using scanning electron microscopy. An increase in the Ar gas flow or the pretreatment time caused a decrease in film adhesion. However, film adhesion increased with increasing Ar pretreatment bias voltage. The values of the film adhesion under the various conditions were 7-47N, and the maximum normal load of 47N was obtained an Ar plasma pretreatment bias voltage of -1150 V, a pretreatment time of 15 min, an Ar gas flow of 62.5 sccm, and a CH4 bias voltage of -600 V.
- 出版日期2013-12
