Nanoscale friction of partially oxidized silicon nitride thin films

作者：Filla J; Aguzzoli C; Sonda V; Farias M C M; Soares G V; Baumvol I J R; Figueroa C A^*

来源：Surface and Coatings Technology, 2011, 205(19): 4528-4531.

DOI：10.1016/j.surfcoat.2011.03.111

• Silicon nitride
• Silicon oxide
• Nanoscale friction
• Ionic potential

The nanoscale friction of partially oxidized silicon nitride thin films deposited by reactive magnetron sputtering was investigated. Post deposition thermal annealing in O-2, trying to simulate the oxidation by atmospheric oxygen in working conditions, formed a partially oxidized layer at the surface with maximum thickness around 10 nm. Unidirectional sliding tests showed a decrease of the low-load friction coefficients of the sliding pair for the samples annealed in oxygen as compared to the non-annealed ones. The results are discussed on the lights of our extension of the crystal chemistry model, which establishes a relationship between ionic potential and friction coefficient.

• 出版日期2011-6-25