Activation of electroplated-Cu surface via plasma pretreatment for low temperature Cu-Sn bonding in 3D interconnection

作者：Wang, Junqiang; Wang, Qian; Liu, Ziyu; Wu, Zijian; Cai, Jian^*; Wang, Dejun^*

来源：Applied Surface Science, 2016, 384: 200-206.

DOI：10.1016/j.apsusc.2016.05.023

• 3D interconnection
• Low temperature Cu-Sn bonding
• Surface activation
• Plasma pretreatment

The pretreatment with Ar mixed 5% H-2 plasma was applied to improve surface properties of electroplated Cu for low temperature Cu-Sn bonding in 3D interconnection. Measurement results revealed that the Ar(5% H-2) plasma effectively increased the surface activity by reducing oxygen content of the Cu surface. Lower surface roughness obtained by optimizing the pretreatment condition could help to suppress oxygen adsorption. Relationships between surface energy and surface oxygen content, surface oxygen content and surface roughness were also established. Evaluation of low temperature (200 degrees C) Cu-Sn bonding with optimal plasma pretreatment exhibited a defect-free interface and high shear strength.

• 出版日期2016-10-30
• 单位大连理工大学; 清华大学