A 2 Bit Nonvolatile Memory Device with a Transistor Switch Function Accomplished with Edge-FN Tunneling Operation

作者：Jian, Fu Yen^*; Chang, Ting Chang; Chu, Ann Kuo; Chen, Shih Ching; Chen, Te Chih; Hsu, Yung en; Tseng, Hsueh chih; Lin, Chia Sheng; Young, Tai Fa; Yang, Ya Liang

来源：Electrochemical and Solid-State Letters, 2010, 13(5): H166-H168.

DOI：10.1149/1.3333405

• leakage currents
• random-access storage
• thin film transistors
• tunnelling

This article proposes an edge-Fowler-Nordheim (FN) tunneling method to make silicon-oxide-nitride-oxide-silicon thin film transistors possess not only 2 bit nonvolatile memory but also transistor switch functions. The 2 bit memory status is determined by measuring drain or source gate-induced drain leakage current, which can be suppressed by hole injection and electron erase after edge-FN tunneling. Because charge injection mainly occurs at the drain or source side during edge-FN tunneling operation, the device retains its transistor switch function without a threshold voltage shift during memory operation.

• 出版日期2010
• 单位中山大学