Dark-Field Imaging of Thin Specimens with a Forescatter Electron Detector at Low Accelerating Voltage

作者：Brodusch Nicolas^*; Demers Hendrix; Gauvin Raynald

来源：Microscopy and Microanalysis, 2013, 19(6): 1688-1697.

DOI：10.1017/S1431927613013287

• dark-field (DF)
• forescatter electron detector (FSED)
• Monte Carlo simulations
• scanning electron microscopy (SEM)
• scanning transmission electron microscopy (STEM)
• transmission electron forward scatter diffraction (t-EFSD)
• transmitted electrons detector (TED)

A forescatter electron detector (FSED) was used to acquire dark-field micrographs (DF-FSED) on thin specimens with a scanning electron microscope. The collection angles were adjusted with the detector distance from the beam axis, which is similar to the camera length of the scanning transmission electron microscope annular DF detectors. The DF-FSED imaging resolution was calculated with SMART-J on an aluminum alloy and carbon nanotubes (CNTs) decorated with platinum nanoparticles. The resolution was three to six times worse than with bright-field imaging. Measurements of nanometer-size objects showed a similar feature size in DF-FSED imaging despite a signal-to-noise ratio 12 times smaller. Monte Carlo simulations were used to predict the variation of the contrast of a CNT/Fe/Pt system as a function of the collection angles. It was constant for very high collection angles (>450 mrad) and confirmed experimentally. The reverse contrast between carbon black particles and the smallest titanium dioxide (TiO2) nanoparticles was predicted by Monte Carlo simulations and observed in the DF-FSED micrograph of a battery electrode coating. However, segmentation of the micrograph was not able to isolate the TiO2 nanoparticle phase because of the close contrast of small TiO2 nanoparticles compared to the C black particles.

• 出版日期2013-12