Dependency of well-contact density on MCUs in 65-nm bulk CMOS SRAM

作者：Xie, Cheng^*; Chen, Yueyue; Chen, Jianjun; Zhang, Jizuo

来源：Science China Information Sciences, 2019, 62(6): 069402.

DOI：10.1007/s11432-017-9549-8

<正>Dear editor,In custom static random access memory (SRAM)cell, radiation-induced single bit upsets (SBUs)are considered as the main cause of soft error [1].Advanced technologies and scaling down of feature sizes have made single-event multiple cell upsets (MCUs) as the vital source of soft error

• 出版日期2019-6
• 单位中国人民解放军国防科学技术大学