Ultrathin-body tunnelling FET using a trench structure

作者：Wang, Ying; Wang, Yan-fu; Sun, Ling-ling; Xue, Wei; Cao, Fei

来源：Micro & Nano Letters, 2016, 11(9): 472-475.

DOI：10.1049/mnl.2016.0082

• tunnel transistors
• field effect transistors
• ultrathin-body tunnelling FET
• trench structure
• ultrathin-channel trench single gate tunnelling field-effect transistor
• trench SG-TFETs
• steeper sub-threshold swing
• short-channel effects
• energy-efficient circuit applications
• size 5 nm
• voltage 0.4 V
• temperature 300 K

An ultrathin-channel trench single gate tunnelling field-effect transistor (trench SG-TFET) with a 5 nm channel thickness is proposed and investigated. Trench SG-TFETs demonstrate a higher I-ON (approximate to 8 times), a steeper sub-threshold swing (SS) (average SS of 46.2 mV/decade and point SS of 21.8 mV/decade), and a higher I-ON/I-OFF current ratio (approximate to 10 times) as compared with the conventional SG-TFET at V-DS = 0.4 V and temperature of 300 K. Also by using intrinsic region in drain, it has a strong immunity to short-channel effects in extremely scaled trench SG-TFETs. The proposed trench SG-TFET seems to be attractive for future energy-efficient circuit applications.

• 出版日期2016-9
• 单位杭州电子科技大学; 哈尔滨工程大学