摘要
A monolithic 18-40 GHz low noise amplifier (LNA) has been developed using 0.25um gate length GaAs/InGaAs/AlGaAs pseudomorphic HEMT technology. This MMIC amplifier achieved 1.4-2.3 dB noise figure with more than 10 dB associate gain from 18-40 GHz. This result rivals some 0.15 mu m GaAs PHEMT process.
- 出版日期2008
- 单位电子科技大学