An 18-40 GHz ultra broadband low noise amplifier MMIC

作者:Yang Guang*; Guo Yunchuan; Xu Ruimin
来源:International Conference on Microwave and Millimeter Wave Technology, 2008-04-21 to 2008-04-24.

摘要

A monolithic 18-40 GHz low noise amplifier (LNA) has been developed using 0.25um gate length GaAs/InGaAs/AlGaAs pseudomorphic HEMT technology. This MMIC amplifier achieved 1.4-2.3 dB noise figure with more than 10 dB associate gain from 18-40 GHz. This result rivals some 0.15 mu m GaAs PHEMT process.