Fabrication and characterization of ambipolar devices on an undoped AlGaAs/GaAs heterostructure

作者：Chen J C H^*; Wang D Q; Klochan O; Micolich A P; Das Gupta K; Sfigakis F; Ritchie D A; Reuter D; Wieck A D; Hamilton A R

来源：Applied Physics Letters, 2012, 100(5): 052101.

DOI：10.1063/1.3673837

We have fabricated AlGaAs/GaAs heterostructure devices in which the conduction channel can be populated with either electrons or holes simply by changing the polarity of a gate bias. The heterostructures are entirely undoped, and carriers are, instead, induced electrostatically. We use these devices to perform a direct comparison of the scattering mechanisms of two-dimensional electrons (mu(peak) - 4 x 10(6) cm(2)/Vs) and holes (mu(peak) - 0.8 x 10(6) cm(2)/Vs) in the same conduction channel with nominally identical disorder potentials. We find significant discrepancies between electron and hole scattering, with the hole mobility being considerably lower than expected from simple theory.

• 出版日期2012-1-30