Anisotropic structural and optical properties of a-plane, (11(2)over-bar0) AlInN nearly-lattice-matched to GaN

作者：Laskar Masihhur R^*; Ganguli Tapas; Rahman A A; Arora Ashish; Hatui Nirupam; Gokhale M R; Ghosh Sandip; Bhattacharya Arnab

来源：Applied Physics Letters, 2011, 98(18): 181108.

DOI：10.1063/1.3583457

We report epitaxial growth of a-plane (11 (2) over bar0) AlInN layers nearly-lattice-matched to GaN. Unlike for c-plane oriented epilayers, a-plane Al(1-x)In(x)N cannot be simultaneously lattice-matched to GaN in both in-plane directions. We study the influence of temperature on indium incorporation and obtain nearly-lattice-matched Al(0.81)In(0.19)N at a growth temperature of 760 degrees C. We outline a procedure to check in-plane lattice mismatch using high-resolution x-ray diffraction, and evaluate the strain and critical thickness. Polarization-resolved optical transmission measurements of the Al(0.81)In(0.19)N epilayer reveal a difference in band gap of similar to 140 meV between (electric field) E parallel to c [0001]-axis and E perpendicular to c conditions with room-temperature photoluminescence peaked at 3.38eV strongly polarized with E parallel to c, in good agreement with strain-dependent band-structure calculations.

• 出版日期2011-5-2