A hybrid memristor-CMOS XOR gate for nonvolatile logic computation

作者：Zhou, Yaxiong; Li, Yi; Xu, Lei; Zhong, Shujing; Xu, Ronggang; Miao, Xiangshui^*

来源：Physica Status Solidi A-Applications and Materials Science, 2016, 213(4): 1050-1054.

DOI：10.1002/pssa.201532872

• AgInSbTe
• logic gates
• memristors
• non-volatile memories
• resistive switching
• XOR

Memristor-based logic gates that can execute memory and logic operations are promising elements for building non-von Neumann computation architecture. In this paper, we proposed a fundamental hybrid memristor-CMOS nonvolatile XOR Boolean logic block with one memristor and four voltage-controlled switches, such as MOSFET or transmission gate. The Ag/Ag5In5Sb60Te30/Ta structure memristors with bipolar resistive switching behaviors were utilized to experimentally demonstrate the XOR function of the block. Further, with the XOR logic block as a basis, a full adder as an extensive circuit example was designed and verified by HSPICE simulation. Our work shows logic-in-memory capabilities with memristors, and provides an alternative way to implement nonvolatile logic operations and construct parallel computation systems.

• 出版日期2016-4
• 单位华中科技大学