Nano-scratch evaluations of copper chemical mechanical polishing

作者：Fu Wei En^*; Chen Chao Chang A; Huang Kuo Wei; Chang Yong Qing; Lin Tzeng Yow; Chang Chi Sheng; Chen Jay San

来源：Thin Solid Films, 2013, 529: 306-311.

DOI：10.1016/j.tsf.2012.03.057

• Material removal
• Chemical-mechanical polishing
• Nano-scratch
• Atomic force microscope
• Passivation layer

Nanoscale scratches are applied using an atomic force microscope (AFM) to investigate the mechanical aspect of the material removal process in chemical-mechanical polishing. The scratching experiments are carried out with the AFM, whose probe has an SiO2 particle (radius similar to 400 nm) bonded to it, at low normal forces in deionized (DI) water and a slurry. The experimental results show that the scratch depth increases with increasing normal force. Under a constant force, the scratch depth of the surface in the slurry is significantly larger than that in DI water. This is due to a soft passivation layer generated during chemical interactions on the copper surface. The passivation layer significantly affects the coefficient of friction (COF) and wear rate. At a low scratch depth (below 20 nm), the COF obtained in DI water is similar to 1.74 times larger than that obtained in the slurry. The wear rate obtained in the slurry is larger than that obtained in the DI water.

• 出版日期2013-2-1