Size and distribution of Te inclusions in THM as-grown CZT wafers: The effect of the rate of crystal cooling

作者：Roy U N^*; Weiler S; Stein J; Hossain A; Camarda G S; Bolotnikov A E; James R B

来源：Journal of Crystal Growth, 2011, 332(1): 34-38.

DOI：10.1016/j.jcrysgro.2011.07.025

• Defects
• Gamma detectors
• THM
• CdZnTe

The concentration and size distribution of Te inclusions/precipitates in CZT are key factors in a device's performance. High concentrations can degrade the performance drastically, especially for long drift-length devices (more than about 10-mm thick). Here, we extend our previous findings on the concentration and size distribution of Te inclusions/precipitates in CZT wafers grown by the THM technique, by considering the rate of cooling of the ingots. We measured their distribution along the diameter of the wafers in a conventional slow-cooled and a fast-cooled ingot. The overall average of Te inclusions/precipitates for the slow-cooled sample was less than 1 x 10(5) cm(-3), attesting to their suitability for fabricating thick radiation-detection devices.

• 出版日期2011-10-1