科研之友
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摘要
A series of AlN films of increasing thickness (up to 4 mu m) were grown on c-plane sapphire by metalorganic vapour phase epitaxy. Plan-view transmission electron microscopy (TEM) images reveal that the dislocation density at the film surface reduces with increasing film thickness, whereas cross-sectional TEM data reveal that dislocation reduction continues to occur beneath the film surface during growth, resulting in the preferential annihilation of c-type and/or (a + c)-type dislocations. We conclude that dislocation movement occurs by climb during AlN growth.
- 出版日期2011-6
