A kilobyte rewritable atomic memory

作者：Kalff F E; Rebergen M P; Fahrenfort E; Girovsky J; Toskovic R; Lado J L; Fernandez Rossier J; Otte A F^*

来源：Nature Nanotechnology, 2016, 11(11): 926-929.

DOI：10.1038/nnano.2016.131

The advent of devices based on single dopants, such as the single-atom transistors, the single-spin magnetometer(2,3) and the single-atom memory(4), has motivated the quest for strategies that permit the control of matter with atomic precision. Manipulation of individual atoms by low-temperature scanning tunnelling microscopy(5) provides ways to store data in atoms, encoded either into their charge state(6,7), magnetization state(8-10) or lattice positions'. A clear challenge now is the controlled integration of these individual functional atoms into extended, scalable atomic circuits. Here, we present a robust digital atomic-scale memory of up to 1 kilobyte (8,000 bits) using an array of individual surface vacancies in a chlorine terminated Cu(100) surface. The memory can be read and rewritten automatically by means of atomic-scale markers and offers an areal density of 502 terabits per square inch, outperforming state-of-the-art hard disk drives by three orders of magnitude. Furthermore, the chlorine vacancies are found to be stable at temperatures up to 77 K, offering the potential for expanding large-scale atomic assembly towards ambient conditions.

• 出版日期2016-11