A Unified Analytical Current Model for N- and P-Type Accumulation-Mode (Junctionless) Surrounding-Gate Nanowire FETs

作者：Yu Yun Seop^*

来源：IEEE Transactions on Electron Devices, 2014, 61(8): 3007-3010.

DOI：10.1109/TED.2014.2329916

• Accumulation-mode (junctionless) transistor
• compact model
• drain-source current
• surrounding-gate nanowire field-effect transistor (SGNWFET)

An analytical current model unifying the n- and p-type accumulation-mode (junctionless) long-channel surrounding-gate nanowire field-effect transistors (AM-SGNW FETs), which is valid from low-to high-doping concentrations, is presented in this brief. A well-known continuous charge model derived by applying the parabolic potential approximation to the Poisson equation in a cylindrical coordinate system was used. The threshold voltage model is newly derived from the decoupled charge method to validate from low-to high-doping region. The simulation results obtained from the proposed charge and drain current model for the AM-SGNWFET agree well with those obtained from 3-D device simulation.

• 出版日期2014-8