A 40-50-GHz SiGe 1 : 8 differential power divider using shielded broadside-coupled striplines

作者：May Jason W^*; Rebeiz Gabriel M

来源：IEEE Transactions on Microwave Theory and Techniques, 2008, 56(7): 1575-1581.

DOI：10.1109/TMTT.2008.924363

• BiCMOS
• differential power divider
• RF integrated circuit (RFIC)
• shielded broadside-coupled striplines
• SiGe

This paper presents a 1: 8 differential power divider implemented in a commercial SiGe BiCMOS process using fully shielded broadside-coupled striplines integrated vertically in the silicon interconnect stackup. The 1: 8 power divider is only 1.12 x 1.5 mm(2) including pads, and shows, 0.4-dB rms gain imbalance and < 3 degrees rms phase imbalance from 40 to 50 GHz over all eight channels, a measured power gain of 14.9 +/- 0.6 dB versus a passive divider at 45 GHz, and a 3-dB bandwidth from 37 to 52 GHz. A detailed characterization of the shielded broadside-coupled striplines is presented and agrees well,with simulations. These compact lines can be used for a variety of applications in SiGe/CMOS millimeter-wave, circuits, including differential signal distribution, miniature power dividers, matching networks, filters, couplers, and baluns.

• 出版日期2008-7