科研之友
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摘要
We have examined the effects of extended hopping parameters in the t-t'-t"-J model on the binding and spatial distribution of charge carriers. Previous studies have shown that a negative next-nearest-neighbor hopping in the physical parameter range serves to weaken striped behavior in the model. We show using exact diagonalization that a physically relevant set of parameters for the hole doped cuprates that includes next-next-nearest-neighbor hopping strengthens the binding of the holes and enhances stripe behavior in the underdoped regime.
- 出版日期2005-2
