Black Phosphorus N-Type Field-Effect Transistor with Ultrahigh Electron Mobility via Aluminum Adatoms Doping

作者:Prakash Amit; Cai Yongqing; Zhang Gang; Zhang Yong Wei; Ang Kah Wee
来源:Small, 2017, 13(5): 1602909.
DOI:10.1002/smll.201602909