All-electric spin transistor using perpendicular spins

作者:Kim Ji Hoon; Bae Joohyung; Min Byoung Chul; Kim Hyung jun; Chang Joonyeon; Koo Hyun Cheol*
来源:Journal of Magnetism and Magnetic Materials, 2016, 403: 77-80.
DOI:10.1016/j.jmmm.2015.11.056

摘要

All-electric spin transistor is demonstrated using perpendicular spins in an InAs quantum well channel. For the injection and detection of perpendicular spins in the quantum well channel, we use Tb20Fe62Co18/Co40Fe40B20 electrodes, where the Tb20Fe62Co18 layer produces the perpendicular magnetization and the Co40Fe40B20 layer enhances the spin polarization. In this spin transistor device, a gate-controlled spin signal as large as 80 m Omega is observed at 10 K without an external magnetic field. In order to confirm the spin injection and relaxation independently, we measure the three-terminal Hanle effect with an in-plane magnetic field, and obtain a spin signal of 1.7 m Omega at 10 K. These results clearly present that the electric field is an efficient way to modulate spin orientation in a strong spin-orbit interaction system.

  • 出版日期2016-4-1