科研之友
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摘要
Achieving true bulk insulating behavior in Bi2Se3, the archetypal topological insulator with a simplistic one-band electronic structure and sizable band gap, has been prohibited by a well-known self-doping effect caused by selenium vacancies, whose extra electrons shift the chemical potential into the bulk conduction band. We report a synthesis method for achieving stoichiometric Bi2Se3 crystals that exhibit nonmetallic behavior in electrical transport down to low temperatures. Hall-effect measurements indicate the presence of both electron-and holelike carriers, with the latter identified with surface state conduction and the achievement of ambipolar transport in bulk Bi2Se3 crystals without gating techniques. With carrier mobilities surpassing the highest values yet reported for topological surface states in this material, the achievement of ambipolar transport via upward band bending is found to provide a key method to advancing the potential of this material for future study and applications.
- 出版日期2017-1-17
