Microstructure of In/Al doping ZnO film by DC magnetron Co-sputtering and thermal oxidation

作者：Liu Yanhui^*; Yan Zhi; Zhou Xiying

来源：Journal of Advanced Microscopy Research, 2012, 7(2): 136-139.

DOI：10.1166/jamr.2012.1106

• Al doped
• DC magnetron co-sputtering
• Dc magnetron sputtering
• Direct-current magnetrons
• Doped
• Doped films
• Doped ZnO
• Irregular particle
• Microstructure morphologies
• Resistance values
• Scanning Electron Microscope
• Spherical particle
• Thermal oxidation
• Thermal oxidation process
• X-ray energy dispersive spectrometers
• ZnO
• ZnO films

Doped and undoped ZnO films were prepared by direct current (DC) magnetron co-sputtering and thermal oxidation. Microstructure and chemical element were study by scanning electron microscope with an X-ray energy dispersive spectrometer attachment. Results showed that In doped Zn film was made of spherical particles by DC magnetron sputtering and then grew up a continuous ZnO film by thermal oxidation. Al doped Zn film was made of fine irregular particles by DC magnetron sputtering and then grew up a granular ZnyO film by thermal oxidation. The melting point of doped film changed by dopant was the major reason for different microstructure of In/Al doped ZnO film not only in magnetron sputtering but in thermal oxidation process. The resistance value testing proves the sensitivity of ZnO film was changed with the changes of microstructure morphology in ZnO film by dopant.

• 出版日期2012
• 单位上海大学