A Common Core Model for Junctionless Nanowires and Symmetric Double-Gate FETs

作者：Sallese Jean Michel^*; Jazaeri Farzan; Barbut Lucian; Chevillon Nicolas; Lallement Christophe

来源：IEEE Transactions on Electron Devices, 2013, 60(12): 4277-4280.

DOI：10.1109/TED.2013.2287528

• Double gate (DG)
• enhancement mode
• field effect transistor (FET)
• junctionless
• modeling
• nanowires (NWs)

In this paper, we evidence the link between the planar and cylindrical junctionless field effect transistors (JL-FETs) from the electrostatics and current point of view. In particular, we show that an approximate solution of the Poisson-Boltzmann equation for JL nanowires can be mapped on the planar double-gate topology generating only negligible mismatch, meaning that both devices can share the same core model as far as long channels are considered. These preliminary results are a first step toward a unification of compact models for JL-FETs.

• 出版日期2013-12