A Unified Physical-Based Model of Series Resistance of Polycrystalline Silicon Thin-Film Transistors With Explicit Analytical Solutions

作者：Wang, Mingxiang^*; He, Ronghua; Zhang, Dongli

来源：IEEE Transactions on Electron Devices, 2013, 60(9): 2827-2833.

DOI：10.1109/TED.2013.2274459

• Poly-Si
• series resistance
• thin-film transistors (TFTs)

A physical-based analytical series resistance (R-s) model is first proposed to accurately evaluate the R-s of polycrystalline silicon thin-film transistors (TFTs). Through carefully analyzing the gate-to-source/drain overlap regions, three underlying physical effects wherein are adequately included, namely the gate (V-g)-induced carrier accumulation, current path spreading, and carrier transport via thermionic emission over grain boundaries. The proposed model can precisely reproduce the V-g dependent R-s behavior and fit the experimental data of both metal-induced lateral crystallized and excimer laser annealed TFTs. Furthermore, an explicit analytical expression of R-s is derived using appropriate approximation, based on which all underlying R-s components and their dependencies on device parameters can be clarified. Finally, feasible approaches of R-s reduction are suggested.

• 出版日期2013-9
• 单位苏州大学