High-Efficiency Cellular Power Amplifiers Based on a Modified LDMOS Process on Bulk Silicon and Silicon-On-Insulator Substrates With Integrated Power Management Circuitry

作者：Tombak Ali^*; Dening David C; Carroll Michael S; Costa Julio; Spears Edward

来源：IEEE Transactions on Microwave Theory and Techniques, 2012, 60(6): 1862-1869.

DOI：10.1109/TMTT.2012.2191975

• Copper pillar flip-chip
• DC/DC converter
• front-end module (FEM)
• integrated power MOS (IPMOS)
• LDMOS
• receive (RX) band noise
• silicon-on-insulator (SOI)
• silicon power amplifier (PA)
• spurious
• transmit module (TXM)

An RF high-voltage CMOS technology is presented for cost-effective monolithic integration of cellular RF transmit functions. The technology integrates a modified LDMOS RF power transistor capable of nearly comparable linear and saturated RF power characteristics to GaAs solutions at cellular frequency bands. Measured results for multistage cellular power amplifier (PA) designs processed on bulk-Si and silicon-on-insulator on high-resistivity Si substrates (1 k Omega . cm) are presented. The low-band multistage PA achieves greater than 60% power-added efficiency (PAE) with more than 35.5-dBm output power. The high-band PA achieves 45%-53% PAE across the band with greater than 33.4-dBm output power. Measured linearity performance is presented using an EDGE modulation source. A dc/dc buck converter was also integrated in the PA die as the power management circuitry. Measured results for the output power, PAE, and spurious emissions in the receive band while the dc/dc converter is biasing the PA and running at different modes are reported.

• 出版日期2012-6