Memristive Model for Synaptic Circuits

作者：Zhang, Yang; Wang, Xiaoping^*; Li, Yi; Friedman, Eby G.

来源：IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS, 2017, 64(7): 767-771.

DOI：10.1109/TCSII.2016.2605069

• Crossbar array
• memristor
• neural network
• synaptic circuits
• threshold model

As a promising alternative for next-generation memory, memristors provide several useful features such as high density, nonvolatility, low power, and good scalability as compared with conventional CMOS-based memories. In this brief, a voltage-controlled threshold memristive model is proposed, which is based on experimental data of memristive devices. Moreover, the model is more suitable for the design of memristor-based synaptic circuits as compared with other memristive models. The effects of memristance variations are considered in the proposed model to evaluate the behavior of memristive synapses within memristor-based neural networks.

• 出版日期2017-7
• 单位华中科技大学