High-Performance Amorphous InGaZnO Thin-Film Transistors With HfO2/Lu2O3/HfO2 Sandwich Gate Dielectrics

作者：Her, Jim-Long^*; Chen, Fa-Hsyang; Li, Wei-Chen; Pan, Tung-Ming

来源：IEEE Transactions on Electron Devices, 2015, 62(5): 1659-1662.

DOI：10.1109/TED.2015.2411738

• Amorphous InGaZnO (alpha-IGZO)
• HfO2/Lu2O3/HfO2 (HLH)
• Lu2O3 gate dielectric
• thin-film transistor (TFT)

In this brief, a high-performance amorphous InGaZnO (alpha-IGZO) thin-film transistor (TFT) with a HfO2/Lu2O3/HfO2 (HLH) sandwich gate dielectric is demonstrated for the first time. Compared with the Lu2O3 dielectric, the alpha-IGZO TFT device using an HLH sandwich gate dielectric exhibited a low threshold voltage of 0.43 V, a high field-effect mobility of 17.2 cm(2)/Vs, a small subthreshold swing of 104 mV/decade, and a high I-ON/I-OFF current ratio of 3.08x10(7), presumably because of the reduction of surface roughness at the dielectric-channel interface. Furthermore, the reliability of voltage stress can be improved using an HLH sandwich dielectric structure.

• 出版日期2015-5
• 单位长春大学